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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

FEATURES 

DIRECT REPLACEMENT FOR SILICONIX 2N4416 

EXCEPTIONAL GAIN (400 MHz) 

10dB (min) 

VERY LOW NOISE FIGURE (400 MHz) 

4dB (max) 

VERY LOW DISTORTION 

HIGH AC/DC SWITCH OFF‐ISOLATION 

ABSOLUTE MAXIMUM RATINGS  

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +200°C 

Operating Junction Temperature ‐55°C to +135°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

300mW 

MAXIMUM CURRENT

Gate Current (Note 1) 

10mA 

MAXIMUM VOLTAGES 

Gate to Drain or Gate to Source ‐30V 

  

  

 

2N4416 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Gate to Source Breakdown Voltage ‐30 

‐‐ 

‐‐ 

V 

IG = ‐1µA,   VDS = 0V 

Gate to Source Cutoff Voltage 

‐‐ 

‐‐ 

‐6 

V 

                  VDS = 15V,   ID = 1nA 

Gate to Source Saturation Current 

5 

‐‐ 

15 

mA 

VDS = 15V,   VGS = 0V 

Gate Leakage Current 

‐‐ 

‐‐ 

‐0.1 

nA 

VGS = ‐20V,  VDS = 0V 

Forward Transconductance 

4500 

‐‐ 

7500 

µS 

VDS = 15V,   VGS = 0V, f = 1kHz 

Output Conductance 

‐‐ 

‐‐ 

50 

µS 

Input Capacitance

2 

‐‐ 

‐‐ 

0.8 

pF  

Reverse Transfer Capacitance

‐‐ 

‐‐ 

4 

pF 

Output Capacitance

‐‐ 

‐‐ 

2 

pF 

Equivalent Input Noise Voltage 

‐‐ 

6 

‐‐ 

nV/√Hz  

2N4416 HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC 

100 Mhz 

400 Mhz 

UNITS 

CONDITIONS 

MIN 

MAX 

MIN 

MAX 

Input Conductance 

‐‐ 

100 

‐‐ 

1000  

 

µS 

 

 

Input Susceptance

‐‐ 

2500 

‐‐ 

10000 

Output Conductance 

‐‐ 

75 

‐‐ 

100 

Output  Susceptance

‐‐ 

1000 

‐‐ 

4000 

Forward Transconductance 

‐‐ 

‐‐ 

4000 

‐‐ 

Power Gain

18 

‐‐ 

10 

‐‐ 

dB 

NF 

Noise Figure

‐‐ 

2 

‐‐ 

4 

NOTES 

1 . Absolute maximum ratings are limiting values above which 2N4416 serviceability may be impaired.  

2.  Not production tested, guaranteed by design 

The 2N4416 is a N-Channel high frequency JFET amplifier

2N4416

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix 2N4416

The 2N4416

N-channel JFET is designed to provide

high-performance amplification at high frequencies.

The hermetically sealed TO-18 package is well suited

for military applications and harsh environment

applications.

2N4416 Applications:

High-Frequency Amplifier / Mixer

Oscillator

Sample-and-Hold

Very Low Capacitance Switches

2N4416 Benefits:

Wideband High Gain

Very High System Sensitivity

High Quality of Amplification

High-Speed Switching Capability

High Low-Level Signal Amplification

Micross Components Europe

Tel: +44 1603 788967

Available Packages:

2N4416 in TO-18

2N4416 in bare die.

Please contact Micross for full

package and die dimensions

TO-18 (Bottom View)