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2SC5544 Folha de dados(PDF) 2 Page - Hitachi Semiconductor |
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2SC5544 Folha de dados(HTML) 2 Page - Hitachi Semiconductor |
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2 / 8 page ![]() 2SC5544 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage V CBO 15 V Collector to emitter voltage V CEO 8V Emitter to base voltage V EBO 1.5 V Collector current I C 50 mA Collector power dissipation Pc 80 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V (BR)CBO 15 ——V I C = 10µA , IE = 0 Collector cutoff current I CBO —— 1 µAV CB = 12V , IE = 0 Collector cutoff current I CEO —— 1 mA V CE = 8V , RBE = ∞ Emitter cutoff current I EBO —— 10 µAV EB = 1.5V , IC = 0 DC current transfer ratio h FE 85 — 170 V V CE = 1V , IC = 5mA Collector output capacitance Cob — 0.88 1.4 pF V CB = 1V , IE = 0 f = 1MHz Gain bandwidth product f T 3 6 — GHz V CE = 1V , IC = 5mA Power gain PG 8 11.6 — dB V CE = 1V, IC = 5mA f = 900MHz Noise figure NF — 1.0 2.0 dB V CE = 1V, IC = 5mA f = 900MHz |
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