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NCT65 Folha de dados(PDF) 3 Page - ON Semiconductor |
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NCT65 Folha de dados(HTML) 3 Page - ON Semiconductor |
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3 / 7 page ![]() NCT65 http://onsemi.com 3 Table 2. ABSOLUTE MAXIMUM RATINGS (Note 1) Parameter Rating Unit Positive Supply Voltage (VDD) to GND −0.3, +0.3 V D+ −0.3 to VDD + 0.3 V D− to GND −0.3 to +3.6 V THERM −0.3 to +3.6 V Input Current, THERM −1, +50 mA Input Current, D− 1 mA Maximum Junction Temperature 150 C Storage Temperature Range −65 to 160 C ESD Capability, Human Body Model (Note 2) 1,500 V ESD Capability, Machine Model (Note 2) 150 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) 2. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. Table 3. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Characteristics, MSOP (Note 4) Thermal Resistance, Junction-to-Air RqJA 142 C/W 3. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 4. As measured using a copper heat spreading area of 650 mm2 (or 1 in2), of 1 oz copper thickness. Table 4. OPERATING RANGES (Note 5) Rating Symbol Min Max Unit Operating Input Voltage VIN 2.8 3.6 V Operating Ambient Temperature Range TA −40 125 C 5. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. Table 5. ELECTRICAL CHARACTERISTICS (TA =TMIN to TMAX, VDD = 2.8 V to 3.6 V. All specifications for −40C to +125C, unless otherwise noted.) Parameter Test Conditions Min Typ Max Unit POWER SUPPLY Supply Voltage VDD 2.8 3.3 3.6 V Average Operating Supply Current, IDD − − 1.15 mA Undervoltage Lockout Threshold − 2.55 − V TRIP POINT ACCURACY Trip Point Accuracy at VDD = 2.8 V to 3.6 V TA = 0C to +70C TA = 0C to +85C − − − − 1 1.5 C Response Time Temperature Measurement to THERM Assertion − 40 52 ms OPEN DRAIN OUTPUT (THERM) Output Low Voltage, VOL IOL = −6.0 mA − − 0.4 V High Output Leakage Current, IOH VOUT =VDD − 0.1 1.0 mA Hysteresis The temperature must drop by this amount below the THERM trippoints before the pins will de-assert − 5 − C |
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