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IXTP160N10T Folha de dados(PDF) 2 Page - IXYS Corporation

Nome de Peças IXTP160N10T
Descrição Electrónicos  TrenchMV Power MOSFET
PDF  5 Pages
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Fabricante Electrônico  IXYS [IXYS Corporation]
Página de início  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP160N10T Folha de dados(HTML) 2 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA160N10T
IXTP160N10T
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID = 60 A, Note 1
65
102
S
C
iss
6600
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
880
pF
C
rss
135
pF
t
d(on)
Resistive Switching Times
33
ns
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = 25 A
61
ns
t
d(off)
R
G = 5 Ω (External)
49
ns
t
f
42
ns
Q
g(on)
132
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 25 A
37
nC
Q
gd
40
nC
R
thJC
0.35
°C/W
R
thCH
TO-220
0.50
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0 V
160
A
I
SM
Pulse width limited by T
JM
430
A
V
SD
I
F = 25 A, VGS = 0 V, Note 1
1.0
V
t
rr
I
F = 25 A, -di/dt = 100 A/μs60
ns
V
R = 50 V, VGS = 0 V
Notes: 1. Pulse test, t
≤ 300 μs, duty cycle d ≤ 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
TO-220 (IXTP) Outline
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineering
lots; but also may yet contain some information supplied during a pre-production design
evaluation. IXYS reserves the right to change limits, test conditions, and dimensions
without notice.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
7,005,734B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
7,063,975B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728B1
6,583,505
6,710,463
6,771,478B2
7,071,537



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