MMBT4401 datasheet(3/3 Pages) GE

Nome de Peças	MMBT4401

Descrição Electrónicos	SMALL SIGNAL TRANSISTORS (NPN)

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	GE [General Semiconductor]

Página de início	http://www.vishay.com

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3 / 3 page

MMBT4401

ELECTRICAL CHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL

MIN.

MAX.

UNIT

Small Signal Current Gain

at VCE = 10 V, IC = 1 mA, f = 1 kHz

hfe

500

Output Admittance

at VCE = 10 V, IC = 1 mA, f = 1 kHz

hoe

1.0

Delay Time (see Fig. 1)

at IB1 = 15 mA, IC = 150 mA

Ð15

VCC = 30 V, VBE = 40 V

Rise Time (see Fig. 1)

at IB1 = 15 mA, IC = 150 mA

Ð20

VCC = 30 V, VBE = 40 V

Storage Time (see Fig. 2)

at IB1 = IB2 = 15 mA, IC = 150 mA

225

VCC = 30 V, IC = 150 mA

Fall Time (see Fig. 2)

at IB1 = IB2 = 15 mA, IC = 150 mA

Ð30

VCC = 30 V, IC = 150 mA

200

+30V

-4 V

< 2 ns

C * < 10 pF

< 10 pF

200

1.0 to 100

ms, DUTY CYCLE Å 2%

1.0 to 100

ms, DUTY CYCLE Å 2%

+30V

+16 V

-2 V

Scope rise time < 4ns

*Total shunt capacitance of test jig,

connectors and oscilloscope

< 20 ns

+16 V

-14 V

SWITCHING TIME EQUIVALENT TEST CIRCUIT

FIGURE 1 - TURN-ON TIME

FIGURE 2 - TURN-OFF TIME

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