IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 30N25

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

24

32

S

C

iss

3950

pF

C

oss

V

GS

= 0 V, V

510

pF

C

rss

177

pF

t

d(on)

19

n s

t

r

V

GS

= 10 V, V

19

n s

t

d(off)

R

79

n s

t

f

17

n s

Q

g(on)

136

nC

Q

gs

V

GS

= 10 V, V

32

nC

Q

gd

52

nC

R

thJC

0.65

K/W

R

thCK

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

30

A

I

SM

Repetitive; pulse width limited by T

JM

120

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

300

n s

Q

rr

3.0

µC

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

TO-247 AD Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3