BF821 datasheet(2/2 Pages) GE

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ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Collector-Base Breakdown Voltage

BF821

at –IC = 100 µA, IE = 0

BF823

–V(BR)CBO

300

250

–

Collector-Emitter Breakdown Voltage

BF823

at –IC = 10 mA, IB = 0

–V(BR)CEO

250

–

Collector-Emitter Breakdown Voltage

BF821

at RBE = 2.7 kΩ, –IC = 10 mA

–V(BR)CER

300

–

Emitter-Base Breakdown Voltage

at –IE = 100 µA, IC = 0

–V(BR)EBO

5––

Collector-Base Cutoff Current

at –VCB = 200 V, IE = 0

–ICBO

––10

Collector-Emitter Cutoff Current

at RBE = 2.7 kΩ, –VCE = 250 V

at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C

–ICER

µA

Collector Saturation Voltage

at –IC = 30 mA, –IB = 5 mA

–VCEsat

––0.8

DC Current Gain

at –VCE = 20 V, –IC = 25 mA

hFE

–

Gain-Bandwidth Product

at –VCE = 10 V, –IC = 10 mA

–

MHz

Feedback Capacitance

at –VCE = 30 V, –IC = 0, f = 1 MHz

Cre

––1.6

Thermal Resistance Junction to Ambient Air

RthJA

–

4301)

K/W

1) Device on fiberglass substrate, see layout

BF821, BF823

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

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