BAW56 datasheet(2/2 Pages) GE

Nome de Peças	BAW56

Descrição Electrónicos	Small Signal Diodes

PDF	2 Pages

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Fabricante Electrônico	GE [General Semiconductor]

Página de início	http://www.vishay.com

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ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

BAW56

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

at IF = 1 mA

at IF = 10 mA

at IF = 50 mA

at IF = 150 mA

–

0.715

0.855

1.0

1.25

Leakage Current

at VR = 70 V

at VR = 70 V, Tj = 150 °C

at VR = 25 V, Tj = 150 °C

–

2.5

100

µA

Capacitance

at VF = VR = 0, f = 1 MHz

Ctot

––2pF

Reverse Recovery Time

from IF = 10 mA to IR = 10 mA

measured at IR = 1 mA, RL = 100 Ω

trr

––6ns

Thermal Resistance

Junction to Ambient Air

RthJA

–

4301)

K/W

1) Device on fiberglass substrate, see layout

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

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