BAS70 datasheet(2/2 Pages) GE

Nome de Peças	BAS70

Descrição Electrónicos	Schottky Diodes

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrônico	GE [General Semiconductor]

Página de início	http://www.vishay.com

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ELECTRICAL CHARACTERISTICS

Ratings for one diode at 25 °C ambient temperature unless otherwise specified

BAS70 THRU BAS70-06

Symbol

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

Tested with 10

µA Pulses

V(BR)R

––V

Leakage Current

Pulse Test tp < 300 µs

at VR = 50 V

–

100

Forward Voltage

Pulse Test tp < 300 µs

at IF = 1 mA

at IF = 15 mA

–

410

1000

Capacitance

at VR = 0 V, f = 1 MHz

Ctot

–1.5

2pF

Reverse Recovery Time

from IF = 10 mA through IR = 10 mA to IR = 1 mA

trr

––5ns

Thermal Resistance Junction to Ambient Air

RthJA

–

4301)

K/W

1) Device on fiberglass substrate, see layout

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

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