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MB84VB2000 Folha de dados(PDF) 12 Page - fujitsu semiconductor

Nome de Peças MB84VB2000
Descrição Electrónicos  8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
PDF  28 Pages
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Fabricante Electrônico  FUJITSU [fujitsu semiconductor]
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MB84VB2000 Folha de dados(HTML) 12 Page - fujitsu semiconductor

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MB84VB2000-10/MB84VB2001-10
s DC CHARACTERISTICS
Notes: 1.The ICC current listed includes both the DC operating current and the frequency dependent component
(at 10 MHz).
2.ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. (VID – VCC) do not exceed 9 V.
5. Total power consumption is (condition of Flash 1) + (condition of Flash 2).
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
ILI
Input Leakage Current
VIN = VSS to VCC, VCC = VCC Max.
–1.0
+1.0
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max.
–1.0
+1.0
µA
ILIT
A9, OE, RESET Inputs Leakage
Current
VCC = VCC Max.
A9, OE, RESET = 12.5 V
—70
µA
ICC1
VCC Active Current (Note 1, 5)
CE = VIL, OE = VIH,
f = 10 MHz
Byte
—
22
mA
Word
25
CE = VIL, OE = VIH,
f = 5 MHz
Byte
—
12
mA
Word
15
ICC2
VCC Active Current (Note 2, 5)
CE = VIL, OE = VIH
—35
mA
ICC3
VCC Current (Standby) (Note 5)
VCC = VCC Max., CE = VCC
± 0.3 V,
RESET = VCC
± 0.3 V
—5
µA
ICC4
VCC Current (Standby, Reset)
(Note 5)
VCC = VCC Max.,
RESET = VSS
± 0.3 V
—5
µA
ICC5
VCC Current
(Automatic Sleep Mode)
(Note 3, 5)
VCC = VCC Max., CE = VSS
± 0.3 V,
RESET = VCC
± 0.3 V
VIN = VCC
± 0.3 V or VSS ± 0.3 V
—5
µA
VIL
Input Low Level
—
–0.5
0.6
V
VIH
Input High Level
—
2.0
VCC + 0.3
V
VID
Voltage for Autoselect and Sector
Protection (A9, OE, RESET)
(Note 4)
—
11.5
12.5
V
VOL
Output Low Voltage Level
IOL = 4.0 mA, VCC = VCC Min.
—
0.45
V
VOH1
Output High Voltage Level
IOH = –2.0 mA, VCC = VCC Min.
2.4
—
V
VOH2
IOH = –100
µA, VCC = VCC Min.
VCC – 0.4
—
V
VLKO
Low VCC Lock-Out Voltage
—
2.3
2.5
V



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