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PMDPB70XPE Folha de dados(PDF) 9 Page - NXP Semiconductors |
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PMDPB70XPE Folha de dados(HTML) 9 Page - NXP Semiconductors |
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9 / 15 page ![]() PMDPB70XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 20 June 2012 9 of 15 NXP Semiconductors PMDPB70XPE 20 V dual P-channel Trench MOSFET ID = -2 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions VGS = 0 V Fig 16. Source current as a function of source-drain voltage; typical values aaa-003879 QG (nC) 06 4 2 -2 -3 -1 -4 -5 VGS (V) 0 017aaa137 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) VDS (V) 0 -1.0 -0.8 -0.4 -0.6 -0.2 aaa-003880 -2 -3 -1 -4 -5 IS (A) 0 Tj = 25 °C Tj = 150 °C |
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