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STL35N6F3 Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STL35N6F3
Descrição Electrónicos  N-channel 60 V, 0.019 廓, 10 A STripFET??III Power MOSFET in PowerFLAT??5x6 package
PDF  17 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL35N6F3 Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STL35N6F3
4/17
Doc ID 16557 Rev 4
2
Electrical characteristics
(TJ = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
60
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 60 V,
VDS = 60 V, TC = 125 °C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
2
4
V
RDS(on)
Static drain-source
on-resistance
VGS= 10 V, ID= 10 A
0.019
0.022
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f = 1 MHz,
VGS = 0
-
762
173
16
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 30 V, ID = 10 A
VGS =10 V
(see Figure 13)
-
13.6
5.0
3.7
-
nC
nC
nC
Rg
Gate input resistance
f=1 MHz open drain
-
3.2
-
Ω



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