NXP Semiconductors

PMPB12UN

20 V single N-channel Trench MOSFET

PMPB12UN

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Product data sheet

6 July 2012

2 / 15

2. Pinning information

Table 2.

Pinning information

Pin

Symbol Description

Simplified outline

Graphic symbol

1

D

drain

2

D

drain

3

G

gate

4

S

source

5

D

drain

6

D

drain

7

D

drain

8

S

source

6

5

7

8

4

Transparent top view

1

2

3

DFN2020MD-6 (SOT1220)

S

D

G

017aaa253

3. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

PMPB12UN

DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no

leads; 6 terminals

SOT1220

4. Marking

Table 4.

Marking codes

Type number

Marking code

PMPB12UN

1F

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

20

V

gate-source voltage

-8

8

V

[1]

-

11.3

A

[1]

-

7.9

A

drain current

[1]

-

5

A

peak drain current

-

31

A

total power dissipation

[1]

-

1.7

W