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RG10 Folha de dados(PDF) 1 Page - EIC discrete Semiconductors |
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RG10 Folha de dados(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() RG10 - RG10Y SUPER FAST RECTIFIER DIODES PRV : 70 - 600 Volts Io : 1.0 - 1.5 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Super fast recovery time MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RG10Y RG10 RG10A UNITS Maximum Recurrent Peak Reverse Voltage VRRM 70 400 600 Volts Maximum RMS Voltage VRMS 49 280 420 Volts Maximum Reverse Voltage VDC 70 400 600 Volts Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C IF(AV) 1.5 1.2 1.0 Amp. Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 50 Amps. Maximum Peak Forward Voltage at IF = 1.0 A. VF 1.1 1.8 2.0 Volts Maximum DC Reverse Current Ta = 25 °C IR 5 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA Maximum Reverse Recovery Time ( Note 1 ) Trr 35 ns Typical Junction Capacitance ( Note 2 ) CJ 50 pf Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC UPDATE : APRIL 23, 1998 RATING D2 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) 0.284 (7.2) 0.268 (6.8) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
Nº de peça semelhante - RG10 |
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Descrição semelhante - RG10 |
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