©

1998

PRELIMINARY DATA SHEET

FEATURE

•

Ultra super mini-mold thin flat package

(1.4 mm

× 0.8 mm × 0.59 mm: TYP.)

•

Contains same chip as 2SC5195

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

100

mA

Total Power Dissipation

125

mW

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C

SILICON TRANSISTOR

2SC5437

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

Document No. P13146EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

PACKAGE DIMENSIONS (in mm)

1.4 ± 0.05

0.8 ± 0.1

1

3

2

PIN CONNECTIONS

1: Emitter

2: Base

3: Collector

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

100

nA

Emitter Cut-off Current

100

nA

DC Current Gain

80

145

Reverse Transfer Capacitance

0.7

0.8

pF

Gain Bandwidth Product (1)

4.0

5.0

GHz

Gain Bandwidth Product (2)

9.5

GHz

Insertion Power Gain (1)

3.0

4.0

dB

Insertion Power Gain (2)

8.0

dB

Noise Figure (1)

NF (1)

1.9

2.5

dB

Noise Figure (2)

NF (2)

1.7

dB

≤ 350

µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.