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SV2006M Folha de dados(PDF) 2 Page - Dynex Semiconductor

Nome de Peças SV2006M
Descrição Electrónicos  Rectifier Diode
PDF  7 Pages
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Fabricante Electrônico  DYNEX [Dynex Semiconductor]
Página de início  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

SV2006M Folha de dados(HTML) 2 Page - Dynex Semiconductor

  SV2006M Datasheet HTML 1Page - Dynex Semiconductor SV2006M Datasheet HTML 2Page - Dynex Semiconductor SV2006M Datasheet HTML 3Page - Dynex Semiconductor SV2006M Datasheet HTML 4Page - Dynex Semiconductor SV2006M Datasheet HTML 5Page - Dynex Semiconductor SV2006M Datasheet HTML 6Page - Dynex Semiconductor SV2006M Datasheet HTML 7Page - Dynex Semiconductor  
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SURGE RATINGS
Conditions
10ms half sine; T
case = 175
oC
V
R = 50% VRRM - 1/4 sine
10ms half sine; T
case =175
oC
V
R = 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2tI2t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2t
I
2t for fusing
A
2s
4.0
kA
51.2 x 103
A2s
3.2
kA
80.0 x 10
3
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
oC/W
-
0.08
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Symbol
Parameter
-
0.23
oC/W
175
oC
T
vj
Virtual junction temperature
T
stg
Storage temperature range
-55
200
oC
-
-
175
oC
Mounting torque 15.0Nm
with mounting compound
Forward (conducting)
Reverse (blocking)
dc
Mounting Torque
-
12.0
15.0
Nm
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
µC
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RM
Peak recovery current
70*
-
A
200*
At V
RRM, Tcase = 175
oC-
20
mA
-
1.4
V
At 600A peak, T
case = 25
oC
Conditions
Typ.
Max.
Units
At T
vj = 175˚C
-
V
TO
Threshold voltage
r
T
Slope resistance
1.0
m
Ω
At T
vj = 175˚C
-
0.8
V
t
rr
reverse recovery time
5.5*
-
µs
I
F = 100A, dIRR/dt = 20A/µs, Tcase = 25˚C
*Typical values.



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