©

1993

DATA SHEET

SILICON TRANSISTOR

Document No. P10394EJ2V0DS00 (2nd edition)

(Previous No. TD-7938)

Date Published August 1995 P

Printed in Japan

2SC5015

FEATURES

•

Small Package

•

•

Low Noise, High Gain

•

Low Voltage Operation

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC5015-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) faceto

perforation side of the tape.

2SC5015-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) faceto

perforation side of the tape.

* Please contact with responsible NEC person, if you require evaluation

sample.Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

30

mA

Total Power Dissipation

150

mW

Junction Temperature

150

˚ C

Storage Temperature

–65 to + 150

˚ C

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS SUPER MINI MOLD

Caution: Electrostatic Sensitive Device

PACKAGE DIMENSIONS

in millimeters

2.1 ± 0.2

1.25 ± 0.1

0.3

(LEADS 2, 3, 4)

+0.1

–0.05

23

1

4

0.4

+0.1

–0.05

0 to 0.1

0.15

+0.1

–0.05

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter