PART

NUMBER

Embossed tape 8 mm wide.

2SC4959–T1

3 Kpcs/Reel.

Pin3 (Collector) face to perfora-

tion side of the tape.

Embossed tape 8 mm wide.

2SC4959–T2

3 Kpcs/Reel.

Pin1 (Emitter), Pin2 (Base) face

to perforation side of the tape.

©

1992

DATA SHEET

The mark 5 shows revised points.

SILICON TRANSISTOR

2SC4959

Caution; Electrostatic sensitive Device.

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

SUPER MINI MOLD

FEATURES

ORDERING INFORMATION

QUANTITY

PACKING STYLE

Document No. P10382EJ2V0DS00 (2nd edition)

(Previous No. TD-2410)

Date Published July 1995 P

Printed in Japan

1995

1.25

± 0.1

2.1

± 0.1

2

1

3

Marking

PACKAGE DIMENSIONS

in millimeters

PIN CONNECTIONS

1.

2.

3.

Emitter

Base

Collector

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

30

mA

Total Power Dissipation

150

mW

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C

* Please contact with responsible NEC person, if you require evaluation

sample.

Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959)