2SC4957 datasheet(1/6 Pages) NEC

Nome de Peças	2SC4957

Descrição Electrónicos	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

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SILICON TRANSISTOR

2SC4957

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

FEATURES

•

Low Noise, High Gain

•

Low Voltage Operation

•

Low Feedback Capacitance

Cre = 0.3 pF TYP.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC4957-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to perforation side

of the tape.

2SC4957-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face to perforation

side of the tape.

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4957)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

6V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

PT

180

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

©

1993

DATA SHEET

PACKAGE DIMENSIONS

in millimeters

PIN CONNECTIONS

1.

2.

3.

4.

Collector

Emitter

Base

Emitter

2.8 –0.3

+0.2

1.5 –0.1

+0.2

5˚

Caution; Electrostatic Sensitive Device.

Document No. P10379EJ2V0DS00 (2nd edition)

(Previous No. TD-2408)

Date Published July 1995 P

Printed in Japan

Nº de peça semelhante - 2SC4957

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC4957	727Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC4957-T1	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC4957-T1	727Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD

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Descrição semelhante - 2SC4957

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	2SC4093	70Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
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	2SC4095	107Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
	2SC4956	48Kb / 6P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
	2SC5011	52Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
	2SC5012	50Kb / 7P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
	2SC5013	52Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
	2SC5014	49Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
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