©

1993

DATA SHEET

SILICON TRANSISTOR

Document No. P10377EJ2V0DS00 (2nd edition)

(Previous No. TD-2406)

Date Published July 1995 P

Printed in Japan

2SC4955

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

•

Low Noise, High Gain

•

Low Voltage Operation

•

Low Feedback Capacitance

Cre = 0.4 pF TYP.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC4955-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation

side of the tape.

2SC4955-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Emitter), Pin2 (Base) face to

perforation side of the tape.

*

Please contact with responsible NEC person, if you evaluation

sample. Unit sample quantity shall be 50 pcs.

(Part No.: 2SC4955)

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

30

mA

Total Power Dissipation

180

mW

Junction Temperature

150

˚C

Storage Temperature

–64 to +150

˚C

PACKAGE DIMENSIONS

in millimeters

1.5

2.8±0.2

+0.1

3

2

1

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector