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VB525SP Folha de dados(PDF) 7 Page - STMicroelectronics

Nome de Peças VB525SP
Descrição Electrónicos  High voltage ignition coil driver power integrated circuit
PDF  19 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VB525SP Folha de dados(HTML) 7 Page - STMicroelectronics

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VB525SP-E
Electrical specifications
Doc ID 18022 Rev 2
7/19
2
Electrical specifications
2.1
Absolute maximum rating
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
Table 3.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
HVc
Collector voltage (internally limited)
-0.3 to Vclamp
V
IC
Collector current (internally limited)
10
A
IC(gnd)
DC current on emitter power
±10.5
A
VCC
Driving stage supply voltage
-0.3 to 7
V
Is
Driving circuitry supply current
±200
mA
Is(gnd)
DC current on ground pin
±1
A
VIN
Input voltage
-0.3 to VCC + 0.3
V
IIN
Maximum input current
100
mA
fIN
Logic input frequency in operative mode
DC to 150
Hz
VOUT(flag)
Output voltage primary threshold current level
-0.3 to VCC + 0.3
V
IOUT(flag)
Flag output current
100
mA
Pmax
Power Dissipation (Tc = 25 °C)
125
W
Es/b
Self clamped energy during output power clamping
(see Figure 5)
275
mJ
VESD
ESD voltage (HVc pin)
±4
KV
VESD
ESD voltage (enable pin)
+1.5; -2
KV
VESD
ESD voltage (other pins)
±2
KV
IBD
Input darlington base current
150
mA
VBD
Input darlington base voltage
Internally limited
V
Tj
Operating junction temperature
-40 to 150
°C
Tstg
Storage temperature range
-55 to 150
°C
VE
Maximum enable voltage
-0.3 to 5.5
V
IE
Maximum enable current
±150
µA



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