STPSC2006CW datasheet(1/7 Pages) STMICROELECTRONICS

Nome de Peças	STPSC2006CW

Descrição Electrónicos	600 V power Schottky silicon carbide diode

PDF	7 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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1 / 7 page

March 2011

Doc ID 018506 Rev 1

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STPSC2006CW

600 V power Schottky silicon carbide diode

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Particularly suitable in PFC boost diode

function

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 600 V rating. Due to the Schottky

construction no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

ST SiC diodes will boost the performance of PFC

operations in hard switching conditions.

Table 1.

Device summary

Symbol

Value

IF(AV)

2 x 10 A

VRRM

600 V

Tj (max)

175 °C

QC (typ)

12 nC

A1

K

A2

A1

A2

K

TO-247

STPSC2006CW

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