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STP80NF03L Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STP80NF03L
Descrição Electrónicos  N-CHANNEL 30V - 0.004 - 80A TO-220 STripFET II MOSFET
PDF  8 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP80NF03L Folha de dados(HTML) 2 Page - STMicroelectronics

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STP80NF03L
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ABSOLUTE MAXIMUM RATINGS
(#) Current Limited by Package.
( ) Pulse width limited by safe operating area.
(1) ISD ≤ 80A, di/dt ≤ 240 A/µs, VDD =24V ; Tj ≤ TJMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE =25 °C UNLESS OTHERWISE SPECIFIED)
OFF/ON
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
30
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
30
V
VGS
Gate-source Voltage
± 20
V
ID (#)
Drain Current (continuous) at TC =25°C
80
A
ID (#)
Drain Current (continuous) at TC = 100°C
80
A
IDM ( )
Drain Current (pulsed)
320
A
PTOT
Total Dissipation at TC =25°C
300
W
Derating Factor
2.0
W/°C
dv/dt (1)
Peak Diode Recovery Voltage Slope
2.0
V/ns
Tstg
Storage Temperature
–65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
Rthj-case
Thermal Resistance Junction-case Max
0.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose Typ
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
40
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25 °C, ID =IAR,VDD =20 V)
2.3
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250 µA, VGS =0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
1µA
VDS = Max Rating, TC =125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250 µA
11.5
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V,ID =40 A
VGS =4.5 V, ID =40 A
0.004
0.0045
0.0045
0.0065
Ω
Ω



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