BSS139ZG-AE2-R datasheet(2/3 Pages) UTC

2 / 3 page

BSS139Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-862.b

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

200

Pulsed

tp≤10µs

IDM

800

Power Dissipation

225

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

556

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=25V, VGS=0V

0.1

µA

VDS=50V, VGS=0V

0.5

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+10

µA

Reverse

VGS=-20V, VDS=0V

-10

µA

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=1.0mA

0.5

1.5

Static Drain-Source On-State Resistance

RDS(ON)

VGS=2.75V, ID=200mA

5.6

Ω

VGS=5.0V, ID=200mA

3.5

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

3.5

5.0

SWITCHING PARAMETERS (Note 2)

Turn-ON Delay Time

tD(ON)

VDD=30V, ID=0.2A

Turn-OFF Delay Time

tD(OFF)

Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%.

2. Switching characteristics are independent of operating junction temperature.

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