2N65KL-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

2N65K

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-932, A



ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

650

Drain-Source Leakage Current

IDSS

VDS = 650V, VGS = 0V

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30V, VDS = 0V

100

Reverse

VGS = -30V, VDS = 0V

-100

Breakdown Voltage Temperature Coefficient △BVDSS △

/TJ ID=250μA, Referenced to 25°C

0.4

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID =1A

5.0

6.0

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS =25V, VGS =0V,

f =1MHz

270

350

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD (ON)

VDD =325V, ID =2.4A,

RG=25Ω (Note 1, 2)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

Total Gate Charge

VDS=520V, VGS=10V,

ID=2.4A (Note 1, 2)

9.0

Gate-Source Charge

QGS

1.6

Gate-Drain Charge

QGD

4.3

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 2.0 A

1.4

Continuous Drain-Source Current

ISD

2.0

Pulsed Drain-Source Current

ISM

8.0

Reverse Recovery Time

trr

VGS = 0 V, ISD = 2.4A,

di/dt = 100 A/μs (Note1)

180

Reverse Recovery Charge

QRR

0.72

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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