1NNPP10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 6

www.unisonic.com.tw

QW-R502-780.B

ELECTRICAL CHARACTERISTICS(CONT.)

FOR P-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-100

V

Drain-Source Leakage Current

-0.5

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

-2

-4

V

Static Drain-Source On-State Resistance(Note 1)

1

Ω

1.45

Ω

DYNAMIC PARAMETERS

Input Capacitance (Note 3)

f=1.0MHz

141

pF

Output Capacitance (Note 3)

13.1

pF

Reverse Transfer Capacitance (Note 3)

10.8

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 3)

3.5

nC

Gate to Source Charge (Note 3)

0.6

nC

Gate to Drain Charge (Note 3)

1.6

nC

Turn-ON Delay Time (Note 2, 3)

1.6

ns

Rise Time (Note 2, 3)

2.1

ns

Turn-OFF Delay Time (Note 2, 3)

5.9

ns

Fall-Time (Note 2, 3)

3.3

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-0.85

A

Maximum Body-Diode Pulsed Current

-3.64

A

Drain-Source Diode Forward Voltage (Note 1)

-0.85 -0.95

V

Notes: 1. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature

3. For design aid only, not subject to production testing