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THS7530PWPR Folha de dados(PDF) 2 Page - National Semiconductor (TI)

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Nome de Peças THS7530PWPR
Descrição Electrónicos  HIGH-SPEED, FULLY DIFFERENTIAL, CONTINUOUSLY VARIABLE GAIN AMPLIFIER
PDF  24 Pages
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Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)

THS7530PWPR Folha de dados(HTML) 2 Page - National Semiconductor (TI)

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THS7530
SLOS405C – DECEMBER 2002 – REVISED FEBRUARY 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGING/ORDERING INFORMATION(1)
PART NUMBER
PACKAGE TYPE
PACKAGE MARKING
TRANSPORT MEDIA, QUANTITY
THS7530PWP
Rails, 90
TSSOP-14-PP
THS7530
THS7530PWPR
Tape and Reel, 2000
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
THS7530
VS+ – VS–
Supply voltage
5.5 V
VI
Input voltage
±VS
IO
Output current
65 mA
VID
Differential input voltage
±4 V
Continuous power dissipation
See Dissipation Rating Table
Maximum junction temperature
+150°C
TJ
Maximum junction temperature for long term stability(2)
+125°C
Tstg
Storage temperature range
–65°C to +150°C
HBM
3000 V
ESD
CDM
1500 V
MM
200 V
(1)
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
PACKAGE THERMAL DATA
qJA
qJC
TA = 25°C
PACKAGE
PCB
(°C/W)
(°C/W)(1)
POWER RATING(2)
PWP (14-pin)(3)
See Layout Considerations in the Application section of this data sheet.
37.5
2.07
3 W
(1)
This data was taken using the JEDEC High-K test printed circuit board (PCB).
(2)
This data was taken using 2 oz. trace and copper pad that is soldered directly to a 3 in x 3 in PCB.
(3)
The THS7530 incorporates a PowerPAD™ on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about using the PowerPAD
thermally enhanced package.
RECOMMENDED OPERATING CONDITIONS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
[VS- to VS+]
Supply voltage
4.5
5
5.5
V
TA
Operating free-air temperature
–40
+85
°C
Input common mode voltage
[VS- to VS+] = 5 V
2.5
V
Output common mode voltage
[VS- to VS+] = 5 V
2.5
V
2
Submit Documentation Feedback
Copyright © 2002–2010, Texas Instruments Incorporated
Product Folder Link(s): THS7530



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