BU931

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R214-012,E

PARAMETER

SYMBOL

RATINGS

UNIT

500

V

400

V

5

V

Collector Current

15

A

Collector Peak Current

30

A

Base Current

1

A

Base Peak Current

5

A

TO-3P

135

W

TO-263

125

W

Junction Temperature

+200

°C

Storage Temperature

-65 ~ +200

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Case

TO-3P

1.1

°C/W

TO-263

1.2

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

100

μA

0.5

mA

20

mA

Collector-Emitter Saturation Voltage (Note)

1.6

V

1.8

V

1.8

V

Base-Emitter Saturation Voltage (Note)

2.2

V

2.4

V

2.5

V

DC Current Gain

300

Diode Forward Voltage

2.5

V

Functional Test

L=7mH

8

A

Inductive Load Storage Time / Fall Time

L=7mH

15

0.5

μs

μs

Note: Pulsed: Pulse duration = 300μs, duty cycle 1.5 %