SWF7N65B datasheet(1/5 Pages) SEMIPOWER

Nome de Peças	SWF7N65B

Descrição Electrónicos	N-channel TO-220F MOSFET

PDF	5 Pages

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Fabricante Electrônico	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Página de início	http://www.samwinsemi.com

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July. 2013. Rev. 3.0

1/5

Features

■ High ruggedness

■ R

DS(ON) (Max 1.4

Ω)@V

GS=10V

■ Gate Charge (Typical 19nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

N-channel TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDSS

Drain to Source Voltage

650

V

ID

Continuous Drain Current (@TC=25oC)

7.0*

A

Continuous Drain Current (@TC=100oC)

4.4*

A

IDM

Drain current pulsed

(note 1)

28

A

VGS

Gate to Source Voltage

±30

V

EAS

Single pulsed Avalanche Energy

(note 2)

535.1

mJ

EAR

Repetitive Avalanche Energy

(note 1)

70.6

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

PD

Total power dissipation (@TC=25oC)

65.17

W

Derating Factor above 25oC

0.52

W/oC

TSTG, TJ

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

oC

TL

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

Rthjc

Thermal resistance, Junction to case

1.92

oC/W

Rthcs

Thermal resistance, Case to Sink

-

oC/W

Rthja

Thermal resistance, Junction to ambient

47.77

oC/W

*. Drain current is limited by junction temperature.

BV

DSS : 650V

I

D

: 7.0A

R

DS(ON) : 1.4 ohm

1. Gate 2. Drain 3. Source

1

2

3

TO-220F

SW7N65B

SAMWIN

1

2

3

Item

Sales Type

Marking

Package

Packaging

1

SW F 7N65B

SW7N65

TO-220F

TUBE

Order Codes

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