TSG40N120CE

N-Channel IGBT with FRD.

1/10

Version: B12

TO-264

PRODUCT SUMMARY

1200

±20

40

General Description

The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This

device is well suited for the resonant or soft switching application such as induction heating, microwave oven,

etc.

Features

●

1200V NPT Trench Technology

●

High Speed Switching

●

Low Conduction Loss

Block Diagram

NPT Trench IGBT

Ordering Information

Part No.

Package

Packing

TSG40N120CE C0

TO-264

25pcs / Tube

Parameter

Symbol

Limit

Unit

Collector-Emitter Voltage

1200

V

Gate-Emitter Voltage

±20

V

Continuous Current

64

A

40

A

Pulsed Collector Current *

120

A

)

℃

40

A

Diode Pulse Forward Current

240

A

Max Power Dissipation

208

W

83

Operating Junction Temperature

-55 to +150

ºC

Storage Temperature Range

-55 to +150

* Repetitive rating: Pulse width limited by max. junction temperature

Pin Definition:

1. Gate

2. Collector

3. Emitter