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PIC16C71 Folha de dados(PDF) 183 Page - Microchip Technology |
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PIC16C71 Folha de dados(HTML) 183 Page - Microchip Technology |
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183 / 337 page  © 1997 Microchip Technology Inc. DS30234D-page 183 PIC16C6X Applicable Devices 61 62 62A R62 63 R63 64 64A R64 65 65A R65 66 67 18.0 ELECTRICAL CHARACTERISTICS FOR PIC16C62/64 Absolute Maximum Ratings † Ambient temperature under bias............................................................................................................... .-55˚C to +85˚C Storage temperature ............................................................................................................................... -65˚C to +150˚C Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) .......................................... -0.3V to (VDD + 0.3V) Voltage on VDD with respect to VSS .......................................................................................................... -0.3V to +7.5V Voltage on MCLR with respect to VSS (Note 2) ............................................................................................... 0V to +14V Voltage on RA4 with respect to Vss ................................................................................................................ 0V to +14V Total power dissipation (Note 1).................................................................................................................................1.0W Maximum current out of VSS pin ............................................................................................................................300 mA Maximum current into VDD pin ...............................................................................................................................250 mA Input clamp current, IIK (VI < 0 or VI > VDD) ......................................................................................................................±20 mA Output clamp current, IOK (VO < 0 or VO > VDD) ...............................................................................................................±20 mA Maximum output current sunk by any I/O pin...........................................................................................................25 mA Maximum output current sourced by any I/O pin .....................................................................................................25 mA Maximum current sunk by PORTA, PORTB, and PORTE* (combined) .................................................................200 mA Maximum current sourced by PORTA, PORTB, and PORTE* (combined) ............................................................200 mA Maximum current sunk by PORTC and PORTD* (combined)................................................................................200 mA Maximum current sourced by PORTC and PORTD* (combined) ..........................................................................200 mA * PORTD and PORTE not available on the PIC16C62. Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL) Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus, a series resistor of 50-100 Ω should be used when applying a “low” level to the MCLR pin rather than pulling this pin directly to VSS. TABLE 18-1: CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES) † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. OSC PIC16C62-04 PIC16C64-04 PIC16C62-10 PIC16C64-10 PIC16C62-20 PIC16C64-20 PIC16LC62-04 PIC16LC64-04 JW Devices RC VDD: 4.0V to 6.0V IDD: 3.8 mA max. at 5.5V IPD: 21 µA max. at 4V Freq:4 MHz max. VDD: 4.5V to 5.5V IDD: 2.0 mA typ. at 5.5V IPD: 1.5 µA typ. at 4V Freq:4 MHz max. VDD: 4.5V to 5.5V IDD: 2.0 mA typ. at 5.5V IPD: 1.5 µA typ. at 4V Freq:4 MHz max. VDD: 3.0V to 6.0V IDD: 3.8 mA max. at 3.0V IPD: 13.5 µA max. at 3V Freq: 4 MHz max. VDD: 4.0V to 6.0V IDD: 3.8 mA max. at 5.5V IPD: 21 µA max. at 4V Freq:4 MHz max. XT VDD: 4.0V to 6.0V IDD: 3.8 mA max. at 5.5V IPD: 21 µA max. at 4V Freq:4 MHz max. VDD: 4.5V to 5.5V IDD: 2.0 mA typ. at 5.5V IPD: 1.5 µA typ. at 4V Freq:4 MHz max. VDD: 4.5V to 5.5V IDD: 2.0 mA typ. at 5.5V IPD: 1.5 µA typ. at 4V Freq:4 MHz max. VDD: 3.0V to 6.0V IDD: 3.8 mA max. at 3.0V IPD: 13.5 µA max. at 3.0V Freq: 4 MHz max. VDD: 4.0V to 6.0V IDD: 3.8 mA max. at 5.5V IPD: 21 µA max. at 4V Freq:4 MHz max. HS VDD: 4.5V to 5.5V VDD: 4.5V to 5.5V VDD: 4.5V to 5.5V Not recommended for use in HS mode VDD: 4.5V to 5.5V IDD: 13.5 mA typ. at 5.5V IDD: 15 mA max. at 5.5V IDD: 30 mA max. at 5.5V IDD: 30 mA max. at 5.5V IPD: 1.5 µA typ. at 4.5V IPD: 1.5 µA typ. at 4.5V IPD: 1.5 µA typ. at 4.5V IPD: 1.5 µA typ. at 4.5V Freq:4 MHz max. Freq: 10 MHz max. Freq: 20 MHz max. Freq: 20 MHz max. LP VDD: 4.0V to 6.0V IDD: 52.5 µA typ. at 32 kHz, 4.0V IPD: 0.9 µA typ. at 4.0V Freq:200 kHz max. Not recommended for use in LP mode Not recommended for use in LP mode VDD: 3.0V to 6.0V IDD: 48 µA max. at 32 kHz, 3.0V IPD: 13.5 µA max. at 3.0V Freq:200 kHz max. VDD: 3.0V to 6.0V IDD: 48 µA max. at 32 kHz, 3.0V IPD:13.5 µA max. at 3.0V Freq:200 kHz max. The shaded sections indicate oscillator selections which are tested for functionality, but not for MIN/MAX specifications. It is recommended that the user select the device type that ensures the specifications required. |
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