STPSC20H065CT datasheet(1/8 Pages) STMICROELECTRONICS

Nome de Peças	STPSC20H065CT

Descrição Electrónicos	650 V power Schottky silicon carbide diode

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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This is information on a product in full production.

October 2012

Doc ID 023605 Rev 2

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STPSC20H065C

650 V power Schottky silicon carbide diode

Datasheet

 production data

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Dedicated to PFC applications

■ High forward surge capability

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide bandgap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1.

Device summary

Symbol

Value

IF(AV)

2 x 10 A

VRRM

650 V

Tj (max)

175 °C

K (2)

A1 (1)

A2 (3)

A1

K

A2

A1

K

A2

TO-220AB

STPSC20H065CT

TO-247

STPSC20H065CW

www.st.com

Nº de peça semelhante - STPSC20H065CT

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STMicroelectronics	STPSC20H065CTY	156Kb / 9P	Dedicated to PFC applications 19-Sep-2014

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