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AM29LL800B Folha de dados(PDF) 35 Page - Advanced Micro Devices |
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AM29LL800B Folha de dados(HTML) 35 Page - Advanced Micro Devices |
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35 / 40 page ![]() Am29LL800B 35 ADV ANCE I N FO RMAT I O N AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter -150 -200 JEDEC Std Description Unit tAVAV tWC Write Cycle Time (Note 1) Min 150 200 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 65 ns tDVEH tDS Data Setup Time Min 65 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min 65 ns tEHEL tCPH CE# Pulse Width High Min 35 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 9 µs Word Typ 11 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec |
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