MTSF3N02HD datasheet(4/12 Pages) MOTOROLA

Nome de Peças	MTSF3N02HD

Descrição Electrónicos	SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM

PDF	12 Pages

Scroll/Zoom	100%

Fabricante Electrônico	MOTOROLA [Motorola, Inc]

Página de início	http://www.freescale.com

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MTSF3N02HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0.4

1.6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 4. Transfer Characteristics

0.04

0.02

Figure 5. On–Resistance versus

Gate–to–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 6. On–Resistance versus Drain Current

and Gate Voltage

100

Figure 7. On–Resistance Variation

with Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 8. Drain–to–Source Leakage Current

versus Voltage

VDS ≥ 10 V

TJ = –55°C

°C

100

°C

0.03

0.01

TJ = 25°C

1.4

1.6

1.8

0.02

0.05

2.3 V

0.03

0.04

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

4.5 V

VGS = 2.7 V

TJ = 25°C

TJ, JUNCTION TEMPERATURE (°C)

– 50

100

150

0.5

1.0

1.5

2.0

VGS = 4.5 V

ID = 1.9 A

125

–25

VGS = 0 V

TJ = 125°C

100

°C

1.2

2.1 V

2.5 V

1.7 V

2.9 V

1.9 V

4.5 V

VGS = 10 V

VGS = 3.8 V

TJ = 25°C

1.2

1000

0.1

°C

0.8

1.5 V

0.05

0.06

0.01

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