MP2207DN datasheet(2/14 Pages) MPS

2 / 14 page

MP2207 – 16V, 4A, 1.3MHz SYNCHRONOUS STEP-DOWN CONVERTER

MP2207 Rev. 0.92

www.MonolithicPower.com

9/1/2010

MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.

Preliminary Specifications Subject to Change

ORDERING INFORMATION

Part Number*

Package

Top Marking

Temperature

MP2207DQ

QFN10 (3mm x 3mm)

–40

°C to +85°C

Part Number**

Package

Top Marking

Temperature

MP2207DN

SOIC8E

MP2207DN

–40

°C to +85°C

* For Tape & Reel, add suffix –Z (eg. MP2207DQ–Z). For RoHS Compliant Packaging, add suffix –LF (eg.

MP2207DQ–LF–Z)

** For Tape & Reel, add suffix –Z (eg. MP2207DN–Z). For RoHS Compliant Packaging, add suffix –LF (eg.

MP2207DN–LF–Z)

PACKAGE REFERENCE

TOP VIEW

GND

EN/SYNC

GND

VCC

EXPOSED PAD

ON BACKSIDE

GND

EN/SYNC

VCC

TOP VIEW

EXPOSED PAD

ON BACKSIDE

CONNECT TO GND

QFN10

SOIC8E

ABSOLUTE MAXIMUM RATINGS (1)

IN to GND ....................................–0.3V to +18V

SW to GND .......................... –0.5V to VIN + 0.3V

.............................-2.5V to VIN + 2.5V for < 50ns

FB, EN/SYNC, VCC to GND.......... –0.3V to +6.5V

BS to SW ....................................–0.3V to +6.5V

Continuous Power Dissipation (TA = +25°C)

(2)

QFN10 (3mm x 3mm) ................................ 2.5W

SOIC8E...................................................... 2.5W

Junction Temperature...............................150°C

Lead Temperature ....................................260°C

Storage Temperature............ –65°C TO +150°C

Recommended Operating Conditions

(3)

Supply Voltage VIN ..............................3V to 16V

Bias Voltage VCC ...................................3V to 6V

Output Voltage VOUT..................0.8V to 0.9 x VIN

Operating Temperature..............–40°C to +85°C

Thermal Resistance

(4)

θJA

θJC

QFN10 (3mm x 3mm)............. 50 ...... 12...

°C/W

SOIC8E .................................. 50 ...... 10...

°C/W

Notes:

1) Exceeding these ratings may damage the device.

2) The maximum allowable power dissipation is a function of the

maximum junction temperature TJ (MAX), the junction-to-

ambient thermal resistance θJA, and the ambient temperature

TA. The maximum allowable continuous power dissipation at

any ambient temperature is calculated by PD (MAX) = (TJ

(MAX)-TA)/θJA. Exceeding the maximum allowable power

dissipation will cause excessive die temperature, and the

regulator will go into thermal shutdown. Internal thermal

shutdown circuitry protects the device from permanent

damage.

3) The device is not guaranteed to function outside of its

operating conditions.

4) Measured on JESD51-7, 4-layer PCB.

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