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AD8212WYRMZ-R71 Folha de dados(PDF) 3 Page - Analog Devices

Nome de Peças AD8212WYRMZ-R71
Descrição Electrónicos  High Voltage Current Shunt Monitor
PDF  16 Pages
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

AD8212WYRMZ-R71 Folha de dados(HTML) 3 Page - Analog Devices

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AD8212
Rev. B | Page 3 of 16
SPECIFICATIONS
VS = 15 V, TOPR = −40°C to +125°C, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Conditions/Comments
Min
Typ
Max
Unit
SUPPLY VOLTAGE (V+)
No external pass transistor
7
65
V
With external PNP transistor1
7
>500
V
SUPPLY CURRENT2
(ISUPPLY = IOUT + IBIAS)
V+ = 7 V to 65 V
220
720
μA
High voltage operation, using external PNP
200
1500
μA
VOLTAGE OFFSET
Offset Voltage (RTI)
TA
±2
mV
Over Temperature (RTI)
TOPR
±3
mV
Offset Drift
TOPR
±10
μV/°C
INPUT
Input Impedance
Differential
2
Common Mode (VCM)
V+ = 7 V to 65 V
5
Voltage Range
Differential
Maximum voltage between V+ and VSENSE
500
mV
VSENSE (Pin 8) Current3
V+ = 7 V to 65 V, TOPR
100
200
nA
OUTPUT
Transconductance
1000
μA/V
Current Range (IOUT)
7 V ≤ V+ ≤ 65 V, 0 mV to 500 mV differential input
500
μA
Gain Error for TOPR
7 V ≤ V+ ≤ 65 V, with respect to 500 μA full scale
±1
%
Impedance
20
Voltage Range
0
V+ − 5
V
REGULATOR
Nominal Value
7 V ≤ V+ ≤ 65 V
4.80
5
5.20
V
PSRR
7 V ≤ V+ ≤ 65 V
80
dB
Bias Current (IBIAS)
TOPR, 7 V ≤ V+ ≤ 65 V
185
200
μA
TOPR, high voltage operation
200
1000
μA
DYNAMIC RESPONSE
Small Signal −3 dB Bandwidth
Gain = 10
1000
kHz
Gain = 20
500
kHz
Gain = 50
100
kHz
Settling Time
Within 0.1% of the true output, gain = 20
2
μs
ALPHA PIN INPUT CURRENT
25
μA
NOISE
0.1 Hz to 10 Hz, RTI
1.1
μV p-p
Spectral Density, 1 kHz, RTI
40
nV/
√Hz
TEMPERATURE RANGE
For Specified Performance (TOPR)
−40
+125
°C
1 Range dependent on the VCE breakdown of the transistor.
2 The AD8212 supply current in normal voltage operation (V+ = 7 V to 65 V) is the bias current (IBIAS) added to output current (IOUT). Output current varies upon input
differential voltage and can range from 0 μA to 500 μA. IBIAS in this mode of operation is typically 185 μA and 200 μA maximum. For high voltage operation mode, refer
to the Hi
section.
gh Voltage Operation Using an External PNP Transistor
High Voltage Operation Using an External PNP Transistor
3 The current of the amplifier into VSENSE (Pin 8) increases when operating in high voltage mode. See the
section
for more information.



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