2SA1213

2009-12-21

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1213

Power Amplifier Applications

Power Switching Applications

• Small flat package

• Complementary to 2SC2873

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−5

V

Collector current

−2

A

Base current

−0.4

A

500

Collector power dissipation

(Note 1)

1000

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Mounted on a ceramic substrate (250 mm

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

PW-MINI

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)