M95160-R datasheet(34/47 Pages) STMICROELECTRONICS

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DC and AC parameters

M95160 M95160-W M95160-R M95160-DF

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DocID022580 Rev 4

Table 15. DC characteristics (M95160-W, device grade 6)

Symbol

Parameter

Test conditions in addition to those

defined in Table 8 and Table 11

Min.

Max.

Unit

ILI

Input leakage

current

VIN = VSS or VCC

-± 2

µA

ILO

Output leakage

current

S = VCC, VOUT = VSS or VCC

-± 2

µA

ICC

Supply current

(Read)

VCC = 2.5 V, fC = 5 MHz,

C = 0.1 VCC/0.9 VCC, Q = open

-2

VCC = 2.5 V, fC = 10 MHz,

C = 0.1 VCC/0.9 VCC, Q = open

-2 (1)

1. 5 mA for the devices identified with process letter G or S.

VCC = 5.5 V, fC = 20 MHz,

C = 0.1 VCC/0.9 VCC, Q = open

-5 (2)

2. Only for the devices identified by process letter K.

ICC0(3)

3. Characterized only, not tested in production.

Supply current

(Write)

During tW, S = VCC, 2.5 V < VCC < 5.5 V

ICC1

Supply current

(Standby)

S = VCC, VCC = 5.5 V,

VIN = VSS or VCC,

-3

µA

S = VCC, VCC = 2.5 V,

VIN = VSS or VCC,

-2

VIL

Input low voltage

–0.45

0.3 VCC

VIH

Input high voltage

0.7 VCC VCC+1

VOL

Output low voltage

IOL = 1.5 mA, VCC = 2.5 V

0.4

VOH

Output high voltage

VCC = 2.5 V and IOH = 0.4 mA or

VCC = 5 V and IOH = 2 mA

0.8 VCC

-V

VRES(3)

Internal reset

threshold voltage

-1.0(4)

4. 0.5 V with the device identified by process letter K.

1.65(5)

5. 1.5 V with the device identified by process letter K.

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