S2010LS3 datasheet(5/12 Pages) LITTELFUSE

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Data Sheets

Sensitive SCRs

E5 - 5

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Electrical Specifications Notes

(1) See Figure E5.1 through Figure E5.9 for current ratings at

specified operating temperatures.

(2) See Figure E5.10 for IGT versus TC or TL.

(3) See Figure E5.11 for instantaneous on-state current (iT) versus on-

state voltage (vT) TYP.

(4) See Figure E5.12 for VGT versus TC or TL.

(5) See Figure E5.13 for IH versus TC or TL.

(6) For more than one full cycle, see Figure E5.14.

(7) 0.8 A to 4 A devices also have a pulse peak forward current on-

state rating (repetitive) of 75 A. This rating applies for operation at

60 Hz, 75 °C maximum tab (or anode) lead temperature, switching

from 80 V peak, sinusoidal current pulse width of 10 µs minimum,

15 µs maximum. See Figure E5.20 and Figure E5.21.

(8) See Figure E5.15 for tgt versus IGT.

(9) Test conditions as follows:

– TC or TL ≤80 °C, rectangular current waveform

– Rate-of-rise of current

≤10 A/µs

– Rate-of-reversal of current

≤5A/µs

– ITM = 1 A (50 µs pulse), Repetition Rate = 60 pps

– VRRM = Rated

– VR = 15 V minimum, VDRM = Rated

– Rate-of-rise reapplied forward blocking voltage = 5 V/µs

– Gate Bias = 0 V, 100

Ω (during turn-off time interval)

(10) Test condition is maximum rated RMS current except TO-92

devices are 1.2 APK; T106/T107 devices are 4 APK.

(11) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(12) VD = 6 V dc, RL = 100 Ω (See Figure E5.19 for simple test circuit

for measuring gate trigger voltage and gate trigger current.)

(13) See Figure E5.1 through Figure E5.9 for maximum allowable case

temperature at maximum rated current.

(14) IGT = 500 µA maximum at TC = -40 °C for T106 devices

(15) IH = 10 mA maximum at TC = -65 °C for 2N5064 Series and

2N6565 Series devices

(16) IH = 6 mA maximum at TC = -40 °C for T106 devices

(17) Pulse Width

≤10 µs

(18) IGT = 350 µA maximum at TC = -65 °C for 2N5064 Series and

2N6565 Series devices

(19) Latching current can be higher than 20 mA for higher IGT types.

Also, latching current can be much higher at -40 °C. See Figure

E5.18.

(20) TC or TL = TJ for test conditions in off state

(21) IDRM and IRRM = 50 µA for 2N5064 and 100 µA for 2N6565 at

125 °C

(22) TO-92 devices specified at -65 °C instead of -40 °C

(23) TC = 110 °C

VGT

IGM

VGRM

PGM

PG(AV)

ITSM

dv/dt

di/dt

tgt

l2t

(4) (12) (22)

Volts

(5) (19)

mAmps

(17)

Amps

Volts

(17)

Watts

(6) (13)

Amps

Volts/µSec

Amps/µSec

(8)

µSec

(9)

µSec

Amps2Sec

TC =

-40 °C

TC =

25 °C

TC =

110 °C

TC = 110 °C

MAX

MIN

60/50 Hz

TYP

MAX

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

6161

0.1

100/83

100

0.8

0.25

6161

0.1

100/83

100

0.8

0.25

6161

0.1

100/83

100

0.8

0.25

8161

0.1

100/83

100

0.8

0.25

8161

0.1

100/83

100

0.8

0.25

8161

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

0.8

0.25

0.1

100/83

100

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