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STM32L151RBH6 Folha de dados(PDF) 61 Page - STMicroelectronics

Nome de Peças STM32L151RBH6
Descrição Electrónicos  Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC
PDF  121 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L151RBH6 Folha de dados(HTML) 61 Page - STMicroelectronics

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STM32L151x6/8/B, STM32L152x6/8/B
Electrical characteristics
Doc ID 17659 Rev 8
61/121
Table 23.
Typical and maximum current consumptions in Standby mode
Symbol
Parameter
Conditions
Typ(1)
Max
(1)(2)
Unit
IDD
(Standby
with RTC)
Supply current in Standby
mode with RTC enabled
RTC clocked by LSI (no
independent watchdog)
TA = -40 °C to 25 °C
VDD = 1.8 V
0.9
TA = -40 °C to 25 °C
1.1
1.8
µA
TA = 55 °C
1.42
2.5
TA= 85 °C
1.87
3
TA = 105 °C
2.78
5
RTC clocked by LSE (no
independent watchdog)(3)
TA = -40 °C to 25 °C
VDD = 1.8 V
1
TA = -40 °C to 25 °C
1.33
2.9
TA = 55 °C
1.59
3.4
TA= 85 °C
2.01
4.3
TA = 105 °C
3.27
6.3
IDD
(Standby)
Supply current in Standby
mode with RTC disabled
Independent watchdog and
LSI enabled
TA = -40 °C to 25 °C
1.1
1.6
Independent watchdog and
LSI OFF
TA = -40 °C to 25 °C
0.3
0.55
TA = 55 °C
0.5
0.8
TA = 85 °C
1
1.7
TA = 105 °C
2.5
4(4)
IDD (WU
from
Standby)
RMS supply current during
wakeup time when exiting
from Standby mode
VDD = 3.0 V
TA = -40 °C to 25 °C
1µA
1.
The typical values are given for VDD = 3.0 V and max values are given for VDD = 3.6 V, unless otherwise specified.
2.
Based on characterization, not tested in production, unless otherwise specified.
3.
Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8pF
loading capacitors.
4.
Tested in production.



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