2SC5010 datasheet(3/12 Pages) RENESAS

3 / 12 page

1993

DATA SHEET

SILICON TRANSISTOR

Document No. P10389EJ2V0DS00 (2nd edition)

(Previous No. TD-2401)

Date Published July 1995 P

Printed in Japan

2SC5010

DESCRIPTION

The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an

NEC proprietary fabrication technique.

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

FEATURES

•

Low Voltage Use.

•

High fT

: 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)

•

Low Cre

: 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

•

Low NF

: 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)

•

High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)

•

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC5010

50 pcs/Unit.

2SC5010-T1

3 kpcs/Reel.

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

Collector Current

Total Power Dissipation

125

Junction Temperature

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

Embossed tape 8 mm wide.

Pin3(Collector) face to perforation side

of the tape.

PACKAGE DIMENSIONS

in milimeters

1.6 ± 0.1

0.8 ± 0.1

1. Emitter

2. Base

3. Collector

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