MCP14E3EP datasheet(3/26 Pages) MICROCHIP

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DS22062B-page 3

MCP14E3/MCP14E4/MCP14E5

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage ................................................................+20V

Input Voltage ............................... (VDD + 0.3V) to (GND – 5V)

Enable Voltage .............................(VDD + 0.3V) to (GND - 5V)

Input Current (VIN>VDD)................................................50 mA

Package Power Dissipation (TA = 50°C)

8L-DFN .......................................................................

Note 3

8L-PDIP ........................................................................1.10W

8L-SOIC .....................................................................665 mW

†

Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational sections of this specification is not intended.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS (NOTE 2)

Electrical Specifications: Unless otherwise indicated, T

A = +25°C, with 4.5V ≤ VDD ≤ 18V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input

Logic ‘1’, High Input Voltage

VIH

2.4

1.5

—

Logic ‘0’, Low Input Voltage

VIL

—1.3

0.8

Input Current

IIN

–1

—

µA

≤ V

IN ≤ VDD

Input Voltage

VIN

-5

—

VDD+0.3

Output

High Output Voltage

VOH

VDD – 0.025

—

DC Test

Low Output Voltage

VOL

—

0.025

DC Test

Output Resistance, High

ROH

—2.5

3.5

IOUT = 10 mA, VDD = 18V

Output Resistance, Low

ROL

—2.5

3.0

IOUT = 10 mA, VDD = 18V

Peak Output Current

IPK

—4.0

—

VDD = 18V (Note 2)

Latch-Up Protection With-

stand Reverse Current

IREV

—

>1.5

—

Duty cycle

≤ 2%, t ≤ 300 µs

Switching Time (Note 1)

Rise Time

—15

Figure 4-1, Figure 4-2

CL = 2200 pF

Fall Time

—18

Figure 4-1, Figure 4-2

CL = 2200 pF

Propagation Delay Time

tD1

—46

Figure 4-1, Figure 4-2

Propagation Delay Time

tD2

—50

Figure 4-1, Figure 4-2

Enable Function (ENB_A, ENB_B)

High-Level Input Voltage

VEN_H

1.60

1.90

2.90

VDD = 12V, LO to HI Transition

Low-Level Input Voltage

VEN_L

1.30

2.20

2.40

VDD = 12V, HI to LO Transition

Hysteresis

VHYST

0.10

0.30

0.60

Enable Leakage Current

IENBL

115

µA

VDD =12V,

ENB_A = ENB_B = GND

Propagation Delay Time

tD3

—60

—

Figure 4-3

(Note 1)

Propagation Delay Time

tD4

—50

—

Figure 4-3

(Note 1)

Note 1: Switching times ensured by design.

2: Tested during characterization, not production tested.

3: Package power dissipation is dependent on the copper pad area on the PCB.

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