2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications.

3. This final package part performance is verified by a functional test correlated to actual performance at one or more

frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may

be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)

matching.

5. All tested parameters guaranteed with measurement accuracy +/- 2dB for P1dB of 17,25 and 32GHz +/- 0.5 for Gain

of 17GHz, +/- 1 dB for Gain of 25 and 32GHz

Table 1. RF Electrical Characteristics

TA=25°C, Vd=3.0V, Id(Q)=230mA, Zin=Zo=50 Ω

17-20GHz

20-30GHz

30-33GHz

Parameter

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max Unit

Comment

Small Signal Gain, Gain

14

16

19

22

18

20.5

dB

Output Power at 1dBGain Compression,

P1dB

18

20.5

22

24.5

21

24

dBm

Output Power at 3dBGain Compression,

P3dB

21.5

24.5

23.5

dBm

Output Third Order Intercept Point,

OIP3

30

30

30

dBm

Reverse Isolation, Iso

45

45

45

dB

Input Return Loss, Rlin

10

10

8

dB

Output Return Loss, RLout

10

14

10

dB

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy.

Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Description

Min.

Typical

Max.

Unit

Comments

Drain Supply Current, Id

230

mA

Vd=5 V, Vg set for typical IdQ –

quiescent current

Gate Supply Operating Voltage, Vg

2

V

IdQ = 230 mA

Gate Supply Current, Ig

7

mA