MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial

(including laser and plasma exciters), broadcast (analog and digital), aerospace

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Signal Type

(W)

f

(MHz)

(dB)

(%)

Pulse

(100 sec, 20% Duty Cycle)

1250 Peak

230

24.0

74.0

CW

1250 CW

230

22.9

74.6

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

27

CW

1300

27

81

40

CW

1300

26

85

81.36

CW

1250

27

84

87.5--108

CW

1100

24

80

144--148

CW

1250

26

78

170--230

DVB--T

225

25

30

352

Pulse

(200 sec,

20% Duty Cycle)

1250

21.5

66

352

CW

1150

20.5

68

500

CW

1000

18

58

1. Contact your local Freescale sales office for additional information on specific

circuit designs.

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

230

Pulse

(100 sec, 20%

Duty Cycle)

>65:1 at all

Phase Angles

1500 Peak

(3 dB

Overdrive)

50

No Device

Degradation

Features

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Device can be used Single--Ended or in a Push--Pull Configuration

 Characterized from 30 V to 50 V for Extended Power Range

 Suitable for Linear Application with Appropriate Biasing

 Integrated ESD Protection with Greater Negative Gate--Source Voltage Range

for Improved Class C Operation

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

Document Number: MRFE6VP61K25H

Rev. 4, 3/2013

Freescale Semiconductor

Technical Data

1.8--600 MHz, 1250 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

MRFE6VP61K25HR6

MRFE6VP61K25HSR5

MRFE6VP61K25GSR5

(Top View)

Drain A

31

Figure 1. Pin Connections

42 Drain B

Gate A

Gate B

NI--1230--4H

MRFE6VP61K25HR6

NI--1230--4S

MRFE6VP61K25HSR5

Note: The backside of the package is the

source terminal for the transistor.

NI--1230--4S GULL

MRFE6VP61K25GSR5

 Freescale Semiconductor, Inc., 2010--2013. All rights reserved.