IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA4N80P

IXTP4N80P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

2.5

4.0

S

C

iss

750

pF

C

oss

V

70

pF

C

rss

6.3

pF

t

d(on)

22

ns

t

r

V

24

ns

t

d(off)

R

60

ns

t

f

29

ns

Q

g(on)

14.2

nC

Q

gs

V

4.8

nC

Q

gd

4.8

nC

R

thJC

1.25

°C/W

R

thCS

(TO-220)

0.25

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

3.5

A

I

SM

Repetitive

8

A

V

SD

I

1.5

V

t

rr

I

560

ns

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

TO-263 (IXTA) Outline

TO-220 (IXTP) Outline

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experience,

and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change

limits, test conditions, and dimensions without notice.