DPG 60 C 300 QB

ns

HiPerFRED²

Symbol

Definition

R a t i n g s

Features / Advantages:

typ.

max.

I

FSM

I

R

A

V

360

I

A

V

F

1.34

R

0.95 K/W

V

1

2

3

min.

30

t = 10 ms

Applications:

V

300

1

T

VJ

V°C

=

T

VJ

°C

=mA

0.1

Package:

Part number

V

T

I

F

=A

V

d =

P

tot

160

W

°C

=

T

VJ

175

°C

-55

V

I

=

300

30

30

T

45°C

DPG 60 C 300 QB

V

A

300

V

300

25

25

25

max. repetitive reverse voltage

reverse current

forward voltage

virtual junction temperature

total power dissipation

max. forward surge current

Conditions

Unit

1.63

°C

=25

C

J

junction capacitance

V =

V;

T

150

V

F0

V

0.70

T

10.5

f = 1 MHz

=

°C

25

mΩ

V

1.06

V

30

1.39

I

F

=A

60

60

2x

threshold voltage

slope resistance

for power loss calculation only

Backside: cathode

3A

T

reverse recovery time

A

7

35

55

ns

(50 Hz), sine

t

rr

=

35 ns

● Housing:

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

Common Cathode

TO-3P

R

VJ

I

RM

max. reverse recovery current

30

25

T= 125°C

VJ

=A/µs

200

/dt

t

rr

200

25

T= 125°C

VJ

µA

50

150

pF

thermal resistance junction to case

thJC

rectangular

0.5

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

FAV

average forward current

FAV

150

IXYS reserves the right to change limits, conditions and dimensions.

©

20100125b

Data according to IEC 60747and per diode unless otherwise specified

2010 IXYS all rights reserved