RJK0855DPB datasheet(1/7 Pages) RENESAS

Nome de Peças	RJK0855DPB

Descrição Electrónicos	80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching

PDF	7 Pages

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

Página de início	http://www.renesas.com

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R07DS1056EJ0200 Rev.2.00

Page 1 of 6

Apr 11, 2013

Preliminary Datasheet

RJK0855DPB

80V, 30A, 11 m

 max.

Silicon N Channel Power MOS FET

Power Switching

Features

 High speed switching

 Low drive current

 Low on-resistance

RDS(on) = 8.2 m typ. (at VGS = 10 V)

 Pb-free

 Halogen-free

 High density mounting

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

G

D

SSS

4

1 23

5

1, 2, 3

Source

4

Gate

5

Drain

1 2

3 4

5

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

80

V

Gate to source voltage

VGSS

20

V

Drain current

ID

30

A

Drain peak current

ID(pulse)

Note1

120

A

Body-drain diode reverse drain current

IDR

30

A

Avalanche current

IAP

Note 2

30

A

Avalanche energy

EAS

Note 2

12

mJ

Channel dissipation

Pch

Note3

60

W

Channel to Case Thermal Resistance

ch-C

2.08

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at L=10uH, Tch = 25

C, Rg  50 

3. Tc = 25

C

R07DS1056EJ0200

(Previous: REJ03G1884-0100)

Rev.2.00

Apr 11, 2013

Nº de peça semelhante - RJK0855DPB

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Renesas Technology Corp	RJK0855DPB	155Kb / 7P	80V, 30A, 11 m??max. Silicon N Channel Power MOS FET Power Switching

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