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STM8AF5178 Folha de dados(PDF) 69 Page - STMicroelectronics

Nome de Peças STM8AF5178
Descrição Electrónicos  Automotive 8-bit MCU, with up to 128 Kbytes Flash, data EEPROM
PDF  110 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AF5178 Folha de dados(HTML) 69 Page - STMicroelectronics

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STM8AF52/62xx, STM8AF51/61xx
Electrical characteristics
Doc ID 14395 Rev 9
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10.3.5
Memory characteristics
Flash program memory/data EEPROM memory
General conditions: TA = -40 °C to 150 °C.
Table 37.
Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1)
1.
Guaranteed by characterization, not tested in production.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU is 16 to 24 MHz
with 1 ws
fCPU is 0 to 16 MHz
with 0 ws
3.0
—
5.5
V
VDD
Operating voltage (code execution)
fCPU is 16 to 24 MHz
with 1 ws
fCPU is 0 to 16 MHz
with 0 ws
2.6
—
5.5
tprog
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
——
6
6.6
ms
Fast programming time for 1 block
(128 bytes)
——
3
3.3
terase
Erase time for 1 block (128 bytes)
—
—
3
3.3
ms
Table 38.
Flash program memory
Symbol
Parameter
Condition
Min
Max
Unit
TWE
Temperature for writing and erasing
—
-40
150
°C
NWE
Flash program memory endurance
(erase/write cycles)(1)
1.
The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
write/erase operation addresses a single byte.
TA = 25 °C
1000
—
cycles
tRET
Data retention time
TA = 25 °C
40
—
years
TA = 55 °C
20
—



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