FMMT489 datasheet(1/1 Pages) DIODES

Nome de Peças	FMMT489

Descrição Electrónicos	SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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Fabricante Electrônico	DIODES [Diodes Incorporated]

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SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE3 - OCTOBER 1995

7

FEATURES

* Very low equivalent on-resistance; RCE(sat) 175mΩ at 1A

COMPLEMENTARY TYPE

FMMT589

PARTMARKING DETAIL

489

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

5V

Continuous Collector Current

IC

1A

Peak Pulse Current

ICM

4A

Base Current

IB

200

mA

Power Dissipation at Tamb=25°C

Ptot

500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO

50

V

IC=100µA

VCEO(sus)

30

V

IC=10mA*

V(BR)EBO

5V

IE=100µA

Collector Cut-Off Current

ICBO

100

nA

VCB=30V

ICES

100

nA

VCES=30V

Emitter Cut-Off Current

IEBO

100

nA

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.3

0.6

V

IC=1A, IB=100mA*

IC=2A, IB=200mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.1

V

IC=1A, IB=100mA*

Base-Emitter

Turn On Voltage

VBE(on)

1.0

V

IC=1A, VCE=2V*

Static Forward Current

Transfer Ratio

hFE

100

60

20

300

IC=1mA, VCE=2V*

IC=1A, VCE=2V*

IC=2A, VCE=2V*

IC=4A, VCE=2V*

Transition Frequency

fT

150

MHz

IC=50mA, VCE=10V

f=100MHz

Collector-Base

Breakdown Voltage

Cobo

10

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FMMT449 datasheet

FMMT489

C

B

E

3 - 114

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	FMMT449	115Kb / 2P	SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR NOVEMBER 1995
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