BAV99S.115 datasheet(1/14 Pages) NXP

Nome de Peças	BAV99S.115

Descrição Electrónicos	High-speed switching diodes

PDF	14 Pages

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Fabricante Electrônico	NXP [NXP Semiconductors]

Página de início	http://www.nxp.com

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1.

Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

[1]

When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA.

BAV99 series

High-speed switching diodes

Rev. 8 — 18 November 2010

Product data sheet

Table 1.

Product overview

Type number

Package

Configuration

Package

configuration

NXP

JEITA

JEDEC

BAV99

SOT23

-

TO-236AB

dual series

small

BAV99S

SOT363

SC-88

-

quadruple; 2 series

very small

BAV99W

SOT323

SC-70

-

dual series

very small

High switching speed: trr ≤ 4ns

Low capacitance: Cd ≤ 1.5 pF

Low leakage current

Reverse voltage: VR ≤ 100 V

Small SMD plastic packages

AEC-Q101 qualified

High-speed switching

Reverse polarity protection

General-purpose switching

Table 2.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IR

reverse current

VR =80V

-

0.5

μA

VR

reverse voltage

-

100

V

trr

reverse recovery time

[1] --

4

ns

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